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제품 상세 정보:
결제 및 배송 조건:
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Frequency Stability: | ±50ppm | Frequency Tolerance: | ±30ppm |
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Operating Temperature: | -40°C ~ 85°C | Load Capacitance: | 18pF |
Package / Case: | HC-49/US | Name: | Passive Electronic Components |
IPA60R360P7SXKSA1 600V CoolMOS™ 360mΩ RDS(on) 11A Current Ultra-Low Switching Losses High Efficiency Robust ESD Protection TO-220 Package for SMPS & Industrial Apps
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²)
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection •Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g. PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS.
Productvalidation
QualifiedaccordingtoJEDECStandard
MOSFET
600V CoolMOSª P7 Power Device
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler.
INFORMATION
Category
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Mfr
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Series
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Packaging
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Tube
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Part Status
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Active
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FET Type
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Technology
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Drain to Source Voltage (Vdss)
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600 V
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Current - Continuous Drain (Id) @ 25°C
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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360mOhm @ 2.7A, 10V
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Vgs(th) (Max) @ Id
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4V @ 140µA
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Gate Charge (Qg) (Max) @ Vgs
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13 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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555 pF @ 400 V
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FET Feature
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-
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Power Dissipation (Max)
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22W (Tc)
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Operating Temperature
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-40°C ~ 150°C (TJ)
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Grade
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-
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Qualification
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-
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Mounting Type
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Through Hole
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Supplier Device Package
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PG-TO220-FP
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Package / Case
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Base Product Number
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Drawing
1. 10 years components experience; One-Stop service for BOM list; PCB&PCBA Service.
2. Produce Communication Antenna, RF Coaxial Cable, RF Connector,Terminals.
3. Distribute GSM/GPRS,GPS,3G,4G/LTE Module.
Our high quality products , competitive price and professional service,
담당자: Mrs. Natasha
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팩스: 86-755-82815220