FM25CL64B-GTR 64Kb Serial F-RAM with 20MHz SPI No-Delay Writes 10^14 Endurance 151-Year Data Retention 2.0-3.6V Operation -40°C to +85°C and Small SOIC Package

FM25CL64B-GTR 64Kb Serial F-RAM with 20MHz SPI No-Delay Writes 10^14 Endurance 151-Year Data Retention 2.0-3.6V Operation -40°C to +85°C and Small SOIC Package

Features

■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8

  ❐ High-endurance 100 trillion (1014) read/writes

  ❐ 151-year data retention (See Data Retention and Endurance on page 12)

  ❐ NoDelay™ writes

  ❐ Advanced high-reliability ferroelectric process

■ Very fast serial peripheral interface (SPI)

  ❐ Up to 20 MHz frequency

  ❐ Direct hardware replacement for serial flash and EEPROM

  ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

■ Sophisticated write protection scheme

  ❐ Hardware protection using the Write Protect (WP ) pin

  ❐ Software protection using Write Disable instruction

  ❐ Software block protection for 1/4, 1/2, or entire array

■ Low power consumption

  ❐ 200 A active current at 1 MHz

  ❐ 3 A (typ) standby current

■ Low-voltage operation: VDD = 2.7 V to 3.65 V

■ Industrial temperature: –40 C to +85 C

■ Packages

  ❐ 8-pin small outline integrated circuit (SOIC) package

  ❐ 8-pin thin dual flat no leads (DFN) package

■ Restriction of hazardous substances (RoHS) compliant

Applications

1. Industrial Automation & Control Systems

Examples: PLCs (Programmable Logic Controllers), smart sensors, motor drives, industrial robots.

Why it's suitable: These systems need to continuously and rapidly log operational parameters, event logs, fault data, or production counts. The F-RAM's ultra-high endurance and fast, delay-free writes ensure critical data is saved completely even at the moment of power loss, preventing data loss due to write delays.

2. Automotive Electronics

Examples: Event Data Recorders (EDR) in ADAS, automotive black boxes, instrument clusters, body control modules.

Why it's suitable: Requires instant logging of large amounts of sensor data during an accident or sudden power loss. F-RAM's fast write characteristic is ideal. Its high endurance is also suitable for frequently updated data like mileage or door open/close counts.

3. Medical Equipment

Examples: Portable medical monitors (e.g., glucose meters, heart rate monitors), implantable devices, diagnostic equipment.

Why it's suitable: Devices need to reliably record patient data, usage logs, and calibration information. F-RAM's low power consumption and high reliability are crucial for data security and long-term stable operation.

4. Smart Metering & Measurement Systems

Examples: Smart electricity meters, water meters, gas meters.

Why it's suitable: Requires updating cumulative usage data every few seconds and saving the final value instantly before power loss. Daily frequent writes are a significant challenge for EEPROM but are not an issue for F-RAM.

5. Data Loggers

Examples: Environmental monitoring (temperature, humidity, pressure loggers), GPS trackers.

Why it's suitable: These applications require continuous logging of data streams at high frequencies. F-RAM's high write speed and infinite endurance allow seamless data logging without the risk of data loss or bottlenecks caused by write delays inherent in EEPROM.

6. High-End Consumer Electronics

Examples: Professional audio equipment, smart home hubs, gaming peripherals.

Why it's suitable: When fast saving of user settings, game state, or real-time sensor data is needed, F-RAM provides a smoother and more reliable experience than EEPROM.

Description

The FM25CL64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

Unlike serial flash and EEPROM, the FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.

These capabilities make the FM25CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

The FM25CL64B provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The FM25CL64B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device specifications are guaranteed over an industrial temperature range of –40 C to +85 C.

INFORMATION

Drawing

Our advantage :phones, PDA's, notebook comput.ers

• High quality products --- our offers are 100% new and original, ROHS
• Competitive price --- good Purchase channels with good price.
• Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
• Adequate inventory --- With the support of our strong Purchasing team,
• Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.

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